Autori: Paneta V
| Naslov | Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy (Article; Proceedings Paper) |
| Autori | Kokkoris M Androulakaki EG Czyzycki M Eric Marko V Karydas AG Leani JJ Mighori A Ntemou E Paneta V Petrovic Snjezana B |
| Info | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2019), vol. 450 br. , str. 144-148 |
| Projekat | IAEA CRP-G42005 'Experiments with Synchrotron Radiation for Modern Environmental and Industrial Applications' [18262] |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Probing high-energy ion-implanted silicon by micro-Raman spectroscopy (Article) |
| Autori | Kopsalis I Paneta V Kokkoris Michael Liarokapis Efthymios Eric Marko V Petrovic Srdjan M  Fazinic Stjepko Tadic T
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| Info | JOURNAL OF RAMAN SPECTROSCOPY, (2014), vol. 45 br. 8, str. 650-656 |
| Projekat | European Community as an Integrating Activity 'Support of Public and Industrial Research Using Ion Beam Technology (SPIRIT)' under EC [227012]; Ministry of Education, Science, and Technological Development of Serbia [III 45006] |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM (Article) |
| Autori | Paneta V Eric Marko V Fazinic Stjepko Kokkoris Michael Kopsalis I Petrovic Srdjan M Tadic T
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| Info | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2014), vol. 320 br. , str. 6-11 |
| Projekat | "Support of Public and Industrial Research Using Ion Beam Technology (SPIRIT)" as an Integrated Infrastructure Initiative project; European Commission, under EC [227012]; Ministry of Education, Science and Technological Development of Serbia [III 45006] |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals (Article) |
| Autori | Eric Marko V Petrovic Srdjan M Kokkoris M Lagoyannis A Paneta V Harissopulos S Telecki Igor N
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| Info | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2012), vol. 274 br. , str. 87-92 |
| Projekat | Ministry of Education and Science of Serbia[45006]; European Commission[227012] |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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