Autori: Liarokapis Efthymios
Naslov | The quantitative 6H-SiC crystal damage depth profiling (Article) |
Autori | Gloginjic Marko P Eric Marko V Kokkoris Michael Liarokapis Efthymios Fazinic Stjepko Karlusic Marko Tomic Kristina Petrovic-Luketic S |
Info | JOURNAL OF NUCLEAR MATERIALS, (2021), vol. 555 br. , str. - |
Projekat | Ministry of Education, Science and Technological Development, Serbia; Horizon 2020 project AIDA-2020 [654168]; Croatian Science Foundation under the project MIOBICC [8127] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Raman mapping of 4-MeV C and Si channeling implantation of 6H-SiC (Article) |
Autori | Flessa Aikaterini Ntemou Eleni Kokkoris Michael Liarokapis Efthymios Gloginjic Marko P Petrovic Srdjan M Eric Marko V Fazinic Stjepko Karlusic Marko Tomic Kristina |
Info | JOURNAL OF RAMAN SPECTROSCOPY, (2019), vol. 50 br. 8, str. 1186-1196 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Probing high-energy ion-implanted silicon by micro-Raman spectroscopy (Article) |
Autori | Kopsalis I Paneta V Kokkoris Michael Liarokapis Efthymios Eric Marko V Petrovic Srdjan M Fazinic Stjepko Tadic T |
Info | JOURNAL OF RAMAN SPECTROSCOPY, (2014), vol. 45 br. 8, str. 650-656 |
Projekat | European Community as an Integrating Activity 'Support of Public and Industrial Research Using Ion Beam Technology (SPIRIT)' under EC [227012]; Ministry of Education, Science, and Technological Development of Serbia [III 45006] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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