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Autori: Jankovic Nebojsa D

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Naslov Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations (Article)
Autori Jankovic Nebojsa D Igic Petar Sakurai Naoki 
Info SOLID-STATE ELECTRONICS, (2010), vol. 54 br. 3, str. 268-274
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor (Article)
Autori Jankovic Nebojsa D Zhou Zhongfu Batcup Steve Igic Petar 
Info INTERNATIONAL JOURNAL OF ELECTRONICS, (2009), vol. 96 br. 7, str. 767-779
Projekat TOYOTA Motor Corporation, Japan
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology (Article)
Autori Jankovic Nebojsa D 
Info SENSORS AND MATERIALS, (2009), vol. 21 br. 3, str. 167-177
Projekat Serbian Ministry or Science and Technological Development
Ispravka Web of Science   Elečas   Rang časopisa   Citati: Web of Science  
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Naslov Dynamic MAGFET model for sensor simulations (Article)
Autori Jankovic Nebojsa D Pesic Tatjana V Pantic Dragan S  
Info IET CIRCUITS DEVICES & SYSTEMS, (2007), vol. 1 br. 4 , Suppl. , str. 270 -274
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov All injection level power PiN diode model including temperature dependence (Article)
Autori Jankovic Nebojsa D Pesic Tatjana V Igic Petar 
Info SOLID-STATE ELECTRONICS, (2007), vol. 51 br. 5 , Suppl. , str. 719 -725
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Modelling of strained-Si/SiGe NMOS transistors including DC self-heating (Article)
Autori Jankovic Nebojsa D Pesic Tatjana V O'Neill AG 
Info SOLID-STATE ELECTRONICS, (2006), vol. 50 br. 3, str. 496-499
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line (Article)
Autori Pesic Tatjana V Jankovic Nebojsa D 
Info IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, (2005), vol. 24 br. 10, str. 1550-1561
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET (Article)
Autori Jankovic Nebojsa D Pesic Tatjana V 
Info SOLID-STATE ELECTRONICS, (2005), vol. 49 br. 7, str. 1086-1089
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers (Article)
Autori Jankovic Nebojsa D Armstrong GA 
Info MICROELECTRONICS JOURNAL, (2004), vol. 35 br. 8, str. 647-653
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter (Article)
Autori Jankovic Nebojsa D O'Neill AG 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2003), vol. 18 br. 9, str. 901-906
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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