Autori: Jaksic Aleksandar B
| Naslov | Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments (Article) |
| Autori | Jaksic Aleksandar B Pejovic Momcilo M Ristic Goran S 
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| Info | APPLIED PHYSICS LETTERS, (2000), vol. 77 br. 25, str. 4220-4222 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs (Article) |
| Autori | Jaksic Aleksandar B Pejovic Momcilo M Ristic Goran S
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| Info | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2000), vol. 47 br. 3, str. 659-666 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | New experimental evidence of latent interface-trap buildup in power VDMOSFETs (Article) |
| Autori | Jaksic Aleksandar B Ristic Goran S Pejovic Momcilo M
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| Info | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2000), vol. 47 br. 3, str. 580-586 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors (Article) |
| Autori | Ristic Goran S Pejovic Momcilo M Jaksic Aleksandar B
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| Info | JOURNAL OF APPLIED PHYSICS, (2000), vol. 87 br. 7, str. 3468-3477 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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