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Naslov Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals (Article)
Autori Eric Marko V Petrovic Srdjan M  Kokkoris M Lagoyannis A Paneta V Harissopulos S Telecki Igor N  
Info NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2012), vol. 274 br. , str. 87-92
Projekat Ministry of Education and Science of Serbia[45006]; European Commission[227012]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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