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Autori: Dankovic Danijel M

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Naslov Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs (Article)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima 
Info MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 9-11, str. 1465-1468
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science  
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Naslov Spontaneous recovery of positive gate bias stressed power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 717-721
Ispravka Web of Science   Citati: Web of Science   Scopus  
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