Autori: Cai Jialin
| Naslov | Incorporating DC bias voltage in poly-harmonic distortion modeling for RF power GaN transistors (Article) |
| Autori | Cheng Shuhao Tang Xiaoqiang Marinkovic Zlatica D  Crupi Giovanni Cai Jialin
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| Info | INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, (2024), vol. 37 br. 2, str. - |
| Projekat | Qianjiang Talent Project Type-D of Zhejiang |
| Ispravka | Web of Science Članak Elečas Rang časopisa |
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| Naslov | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) (Article) |
| Autori | Crupi Giovanni Latino Mariangela Gugliandolo Giovanni Marinkovic Zlatica D Cai Jialin Bosi Gianni Raffo Antonio Fazio Enza Donato Nicola
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| Info | ELECTRONICS, (2023), vol. 12 br. 8, str. - |
| Projekat | Italian Ministry of University and Research (MUR) through the PRIN [2017FL8C9N]; Ministry of Science, Technological Development and Innovations of the Republic of Serbia; GaN4AP (GaN for Advanced Power Applications) project [CUP: B82C21001520008] |
| Ispravka | Web of Science Članak Elečas Rang časopisa |
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