Autori: Stojadinovic Ninoslav D
Naslov | Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics (Article) |
Autori | Spassov Dencho Paskaleva Albena Guziewicz Elzbieta Davidovic Vojkan S Stankovic Srboljub J Djoric-Veljkovic Snezana M Ivanov Tzvetan Stanchev Todor Stojadinovic Ninoslav D |
Info | MATERIALS, (2021), vol. 14 br. 4, str. - |
Projekat | Bulgarian National Scientific Fund [KP-06-H37/32] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method (Article) |
Autori | Mitrovic Nikola I Dankovic Danijel M Randjelovic Branislav M Prijic Zoran D Stojadinovic Ninoslav D |
Info | INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2020), vol. 50 br. 3, str. 205-214 |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia; Serbian Academy of Science and Arts |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Modeling of NBTS Effects in P-Channel Power VDMOSFETs (Article) |
Autori | Dankovic Danijel M Mitrovic Nikola I Prijic Zoran D Stojadinovic Ninoslav D |
Info | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2020), vol. 20 br. 1, str. 204-213 |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts [F-148] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | NBTI and irradiation related degradation mechanisms in power VDMOS transistors (Article; Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stankovic Srboljub J Prijic Aneta P Prijic Zoran D Manic Ivica Dj Dankovic Danijel M |
Info | MICROELECTRONICS RELIABILITY, (2018), vol. 88-90 br. , str. 135-141 |
Projekat | Ministry of Education, Science and Technological Development of Republic of Serbia [OI-171026]; Serbian Academy of Science and Arts (SASA) [F-148] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | A review of pulsed NBTI in P-channel power VDMOSFETs (Review) |
Autori | Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Davidovic Vojkan S Prijic Zoran D Golubovic Snezana M Djoric-Veljkovic Snezana M Paskaleva Albena Spassov Dencho Stojadinovic Ninoslav D |
Info | MICROELECTRONICS RELIABILITY, (2018), vol. 82 br. , str. 28-36 |
Projekat | Ministry of Science of the Republic of Serbia [OI-171026, TR-32026]; SASA [F-148] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors (Article) |
Autori | Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Prijic Aneta P Stojadinovic Ninoslav D |
Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2018), vol. 57 br. 4, str. - |
Projekat | Serbian Academy of Sciences and Arts (SASA) [F-148]; Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs (Article) |
Autori | Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Marjanovic Milos B Ilic Aleksandar Prijic Zoran D Stojadinovic Ninoslav D |
Info | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2016), vol. 16 br. 4, str. 522-531 |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis, Serbia |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors (Article) |
Autori | Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D |
Info | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2016), vol. 63 br. 2, str. 1268-1275 |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article) |
Autori | Dankovic Danijel M Stojadinovic Ninoslav D Prijic Zoran D Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Djoric-Veljkovic Snezana M Golubovic Snezana M |
Info | CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. - |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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Naslov | Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation (Article) |
Autori | Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Djoric-Veljkovic Snezana M Davidovic Vojkan S Stojadinovic Ninoslav D Prijic Zoran D Golubovic Snezana M |
Info | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2015), vol. 30 br. 10, str. - |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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