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Autori: Stojadinovic Ninoslav D

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Naslov Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics (Article)
Autori Spassov Dencho Paskaleva Albena Guziewicz Elzbieta Davidovic Vojkan S Stankovic Srboljub J Djoric-Veljkovic Snezana M Ivanov Tzvetan Stanchev Todor Stojadinovic Ninoslav D 
Info MATERIALS, (2021), vol. 14 br. 4, str. -
Projekat Bulgarian National Scientific Fund [KP-06-H37/32]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method (Article)
Autori Mitrovic Nikola I Dankovic Danijel M Randjelovic Branislav M Prijic Zoran D Stojadinovic Ninoslav D 
Info INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2020), vol. 50 br. 3, str. 205-214
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia; Serbian Academy of Science and Arts
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Modeling of NBTS Effects in P-Channel Power VDMOSFETs (Article)
Autori Dankovic Danijel M Mitrovic Nikola I Prijic Zoran D Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2020), vol. 20 br. 1, str. 204-213
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts [F-148]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov NBTI and irradiation related degradation mechanisms in power VDMOS transistors (Article; Proceedings Paper)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stankovic Srboljub J Prijic Aneta P Prijic Zoran D Manic Ivica Dj Dankovic Danijel M 
Info MICROELECTRONICS RELIABILITY, (2018), vol. 88-90 br. , str. 135-141
Projekat Ministry of Education, Science and Technological Development of Republic of Serbia [OI-171026]; Serbian Academy of Science and Arts (SASA) [F-148]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov A review of pulsed NBTI in P-channel power VDMOSFETs (Review)
Autori Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Davidovic Vojkan S Prijic Zoran D Golubovic Snezana M Djoric-Veljkovic Snezana M Paskaleva Albena Spassov Dencho Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2018), vol. 82 br. , str. 28-36
Projekat Ministry of Science of the Republic of Serbia [OI-171026, TR-32026]; SASA [F-148]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors (Article)
Autori Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Prijic Aneta P Stojadinovic Ninoslav D 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2018), vol. 57 br. 4, str. -
Projekat Serbian Academy of Sciences and Arts (SASA) [F-148]; Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs (Article)
Autori Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Marjanovic Milos B Ilic Aleksandar Prijic Zoran D Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2016), vol. 16 br. 4, str. 522-531
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis, Serbia
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors (Article)
Autori Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2016), vol. 63 br. 2, str. 1268-1275
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article)
Autori Dankovic Danijel M Stojadinovic Ninoslav D Prijic Zoran D Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Djoric-Veljkovic Snezana M Golubovic Snezana M 
Info CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science  
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Naslov Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation (Article)
Autori Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Djoric-Veljkovic Snezana M Davidovic Vojkan S Stojadinovic Ninoslav D Prijic Zoran D Golubovic Snezana M 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2015), vol. 30 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science  
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