Autori: Stojadinovic Ninoslav D
Naslov | Modeling of gamma-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors (Erratum - errors in Authors - vol 38, pg 4699, 1999) (Correction) |
Autori | Stojadinovic Ninoslav D Golubovic Snezana M Djoric-Veljkovic Snezana M Davidovic Vojkan S |
Info | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, (2001), vol. 40 br. 3A, str. 1530-1530 |
Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science |
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Naslov | Analytical modelling of electrical characteristics in gamma-irradiated power VDMOS transistors (Article) |
Autori | Manic Ivica Dj Pavlovic Zoran Prijic Zoran D Davidovic Vojkan S Stojadinovic Ninoslav D |
Info | MICROELECTRONICS JOURNAL, (2001), vol. 32 br. 5-6, str. 485-490 |
Ispravka | Web of Science Članak Citati: Web of Science Scopus |
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Naslov | Progress in power semiconductors (Editorial Material) |
Autori | Charitat G Benda V Stojadinovic Ninoslav D |
Info | MICROELECTRONICS JOURNAL, (2001), vol. 32 br. 5-6, str. 395-395 |
Ispravka | Web of Science Članak Citati: Web of Science |
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Naslov | Radiation effects in low-temperature stressed power VDMOS transistors (Proceedings Paper) |
Autori | Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
Info | 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, (2000), vol. br. , str. 337-340 |
Ispravka | Web of Science Citati: Web of Science Scopus |
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Naslov | Papers presented at the 22nd International Conference on Microelectronics (MIEL) 14-17 May 2000, Nis, Yugoslavia (Editorial Material) |
Autori | Stojadinovic Ninoslav D |
Info | MICROELECTRONICS JOURNAL, (2000), vol. 31 br. 11-12, str. 837-837 |
Ispravka | Web of Science Članak Citati: Web of Science |
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