Autori: Stojadinovic Ninoslav D
Naslov | Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs (Article) |
Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
Info | MICROELECTRONICS RELIABILITY, (2003), vol. 43 br. 9-11, str. 1455-1460 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Effects of burn-in stressing on radiation response of power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
Info | MICROELECTRONICS JOURNAL, (2002), vol. 33 br. 11, str. 899-905 |
Ispravka | Web of Science Članak Citati: Web of Science Scopus |
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Naslov | Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima |
Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 9-11, str. 1465-1468 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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Naslov | Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 4-5, str. 669-677 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Effects of positive gate bias stress on radiation response in power VDMOSFETs (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
Info | 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 723-726 |
Ispravka | Web of Science Citati: Web of Science Scopus |
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Naslov | Spontaneous recovery of positive gate bias stressed power VDMOSFETs (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima |
Info | 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 717-721 |
Ispravka | Web of Science Citati: Web of Science Scopus |
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Naslov | Radiation hardening of power MOSFETs using electrical stress (Article) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
Info | ELECTRONICS LETTERS, (2002), vol. 38 br. 9, str. 431-432 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Gamma-irradiation effects in power MOSFETs for application in communication satellites (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Manic Ivica Dj Golubovic Snezana M |
Info | TELSIKS 2001, VOL 1 & 2, PROCEEDINGS, (2001), vol. br. , str. 395-400 |
Ispravka | Web of Science Citati: Web of Science |
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Naslov | Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
Info | MICROELECTRONICS RELIABILITY, (2001), vol. 41 br. 9-10, str. 1373-1378 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
Info | PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, (2001), vol. br. , str. 243-248 |
Ispravka | Web of Science Citati: Web of Science Scopus |
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