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Naslov Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two-Photon Oxidation (Article)
Autori Emelianov Aleksei V Nekrasov Nikita P Moskotin Maksim V Fedorov Georgy E Otero Nerea Romero Pablo M Nevolin Vladimir K Afinogenov Boris I Nasibulin Albert G Bobrinetskiy Ivan I  
Info ADVANCED ELECTRONIC MATERIALS, (2021), vol. 7 br. 3, str. -
Projekat Russian Science Foundation (RSF) [19-19-00401]; Russian Foundation for Basic Research (RFBR) [20-03-00804, 18-29-20116]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Photosensitive in-plane junction in graphene field effect transistor modified under femtoseconds laser irradiation (Proceedings Paper)
Autori Bobrinetskiy Ivan I  Emelianov Aleksei V Kireev Dmitry Otero Nerea Romero Pablo M 
Info NANOPHOTONICS VII, (2018), vol. 10672 br. , str. -
Projekat Russian Science Foundation [14-19-01308]
Ispravka Web of Science   Članak   Citati: Web of Science   Scopus  
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Naslov Femtosecond laser-induced CNT heterojunction as visible light photodetector (Proceedings Paper)
Autori Emelianov Aleksei V Bobrinetskiy Ivan I  Otero Nerea Romero Pablo M 
Info FIBER LASERS AND GLASS PHOTONICS: MATERIALS THROUGH APPLICATIONS, (2018), vol. 10683 br. , str. -
Projekat Russian Science Foundation [14-19-01308]
Ispravka Web of Science   Članak   Citati: Web of Science   Scopus  
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