Autori: Odalovic Mihajlo T
| Naslov | A Stochastic Model of Gamma-Ray Induced Oxide Charge Distribution and Threshold Voltage Shift of Mos Transistors (Article) |
| Autori | Kevkic Tijana S  Odalovic Mihajlo T Petkovic Dragan M
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| Info | NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2012), vol. 27 br. 1, str. 33-39 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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