Pronađeno: 41-49 / 49 radova

Autori: Manic Ivica Dj

>> Filter: Samo Article i Review

>> Sve godine

Naslov Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs (Article)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S  Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima 
Info MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 9-11, str. 1465-1468
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs (Article)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S  Golubovic Snezana M Dimitrijev Sima 
Info MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 4-5, str. 669-677
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Effects of positive gate bias stress on radiation response in power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S  Golubovic Snezana M 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 723-726
Ispravka Web of Science   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Spontaneous recovery of positive gate bias stressed power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S  Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 717-721
Ispravka Web of Science   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Radiation hardening of power MOSFETs using electrical stress (Article)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S  Golubovic Snezana M 
Info ELECTRONICS LETTERS, (2002), vol. 38 br. 9, str. 431-432
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Gamma-irradiation effects in power MOSFETs for application in communication satellites (Proceedings Paper)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S  Manic Ivica Dj Golubovic Snezana M 
Info TELSIKS 2001, VOL 1 & 2, PROCEEDINGS, (2001), vol. br. , str. 395-400
Ispravka Web of Science   Citati: Web of Science  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs (Article)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S  Golubovic Snezana M Dimitrijev Sima 
Info MICROELECTRONICS RELIABILITY, (2001), vol. 41 br. 9-10, str. 1373-1378
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S  Golubovic Snezana M 
Info PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, (2001), vol. br. , str. 243-248
Ispravka Web of Science   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Analytical modelling of electrical characteristics in gamma-irradiated power VDMOS transistors (Article)
Autori Manic Ivica Dj Pavlovic Zoran Prijic Zoran D Davidovic Vojkan S  Stojadinovic Ninoslav D 
Info MICROELECTRONICS JOURNAL, (2001), vol. 32 br. 5-6, str. 485-490
Ispravka Web of Science   Članak   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
>> Sve godine

Ispis zapisa u formatu:TXT | BibTeX