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Autori: Hadzi-Vukovic Jovan M

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Naslov Low frequency noise as a tool for diagnostic of ESD degraded GaAs mesfets (Article)
Autori Jevtic Milan M Hadzi-Vukovic Jovan M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2009), vol. 11 br. 2, str. 155-163
Projekat Serbian Ministry of Science and Environmental Protection
Ispravka Web of Science   Elečas   Rang časopisa   Citati: Web of Science  
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Naslov The study of ESD induced defects in smart power ESD protection circuits using low frequency noise measurements (Proceedings Paper)
Autori Hadzi-Vukovic Jovan M Jevtic Milan M Glavanovics M Rothleitner H 
Info PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, (2008), vol. 205 br. 11, str. 2544-2547
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science  
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Naslov Diagnostics of GaAsHEMT based on noise measurements (Article)
Autori Jevtic Milan M Hadzi-Vukovic Jovan M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2007), vol. 9 br. 11 , Suppl. , str. 3579 -3584
Ispravka Web of Science   Elečas   Rang časopisa   Citati: Web of Science  
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Naslov Study of the electrical cycling stressed large area Schottky diodes using I-V and noise measurements (Article)
Autori Jevtic Milan M Hadzi-Vukovic Jovan M 
Info MICROELECTRONICS RELIABILITY, (2007), vol. 47 br. 1, str. 51-58
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov The voltage pulse degraded Ti/4H-SiC Schottky diodes studied with I-V and low frequency noise measurements (Article)
Autori Hadzi-Vukovic Jovan M Jevtic Milan M 
Info DIAMOND AND RELATED MATERIALS, (2007), vol. 16 br. 1, str. 81-89
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Low frequency noise of GaAs MESFET degraded in ESD test (Proceedings Paper)
Autori Jevtic Milan M Hadzi-Vukovic Jovan M 
Info 2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings, (2006), vol. br. , str. 569-572
Ispravka Web of Science   Citati: Web of Science  
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Naslov The study of PMOS V-th distribution using process and device Simulations and C-V measurements (Proceedings Paper)
Autori Hadzi-Vukovic Jovan M Jevtic Milan M 
Info Eurocon 2005: The International Conference on Computer as a Tool, Vol 1 and 2 , Proceedings, (2005), vol. br. , str. 871-874
Ispravka Web of Science   Citati: Web of Science  
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Naslov Pulse voltage stress degradation of 4H-SiC Schottky diodes studied by I-V and noise measurements (Proceedings Paper)
Autori Jevtic Milan M Hadzi-Vukovic Jovan M Dinu Dan 
Info CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE VOL 1 AND 2, (2005), vol. br. , str. 369-372
Ispravka Web of Science   Citati: Web of Science  
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Naslov An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator (Article)
Autori Jevtic Milan M Hadzi-Vukovic Jovan M Ramovic Rifat M 
Info MICROELECTRONICS JOURNAL, (2002), vol. 33 br. 11, str. 955-960
Ispravka Web of Science   Članak   Citati: Web of Science   Scopus  
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Naslov A novel analytical model of a SiC MOSFET (Proceedings Paper)
Autori Ramovic Rifat M Jevtic Milan M Hadzi-Vukovic Jovan M Randjelovic Danijela V  
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 447-450
Ispravka Web of Science   Citati: Web of Science   Scopus  
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