Autori: Dimitrijev Sima
| Naslov | Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors (Article) |
| Autori | Davidovic Vojkan S Stojadinovic Ninoslav D Dankovic Danijel M Golubovic Snezana M Manic Ivica Dj Djoric-Veljkovic Snezana M Dimitrijev Sima |
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2008), vol. 47 br. 8, str. 6272-6276 |
| Projekat | Ministry of Science of the Republic of Serbia |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Electrical stressing effects in commercial power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
| Info | IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, (2006), vol. 153 br. 3, str. 281-288 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Effects of electrical stressing in power VDMOSFETS (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2005), vol. 45 br. 1, str. 115-122 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Effects of electrical stressing in power VDMOSFETs (Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
| Info | 2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, (2003), vol. br. , str. 291-296 |
| Ispravka | Web of Science Citati: Web of Science |
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| Naslov | Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 9-11, str. 1465-1468 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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| Naslov | Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 4-5, str. 669-677 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Spontaneous recovery of positive gate bias stressed power VDMOSFETs (Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima |
| Info | 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 717-721 |
| Ispravka | Web of Science Citati: Web of Science Scopus |
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| Naslov | Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2001), vol. 41 br. 9-10, str. 1373-1378 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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