Autori: Balakshin Yu V
Naslov | Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon (Article) |
Autori | Balakshin Yu V Kozhemiako AV Petrovic Srdjan M ![]() |
Info | SEMICONDUCTORS, (2019), vol. 53 br. 8, str. 1011-1017 |
Projekat | Russian Foundation for Basic Research [18-32-00833mol_a]; Ministry of Education, Science, and Technological Development of Serbia [III 45006] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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