Autori: Alkoash Abedalkhem
| Naslov | An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs (Article) |
| Autori | Alkoash Abedalkhem Sasic Rajko M Ostojic Stanko M Lukic Petar M 
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| Info | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, (2011), vol. 8 br. 1, str. 47-50 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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| Naslov | The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ostojic Stanko M Alkoash Abedalkhem
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| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2010), vol. 12 br. 5, str. 1161-1164 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science |
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