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Autori: Djoric-Veljkovic Snezana M

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Naslov Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs (Article)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima 
Info MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 4-5, str. 669-677
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Effects of positive gate bias stress on radiation response in power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 723-726
Ispravka Web of Science   Citati: Web of Science   Scopus  
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Naslov Spontaneous recovery of positive gate bias stressed power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 717-721
Ispravka Web of Science   Citati: Web of Science   Scopus  
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Naslov Radiation hardening of power MOSFETs using electrical stress (Article)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M 
Info ELECTRONICS LETTERS, (2002), vol. 38 br. 9, str. 431-432
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Gamma-irradiation effects in power MOSFETs for application in communication satellites (Proceedings Paper)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Manic Ivica Dj Golubovic Snezana M 
Info TELSIKS 2001, VOL 1 & 2, PROCEEDINGS, (2001), vol. br. , str. 395-400
Ispravka Web of Science   Citati: Web of Science  
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Naslov Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs (Article)
Autori Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima 
Info MICROELECTRONICS RELIABILITY, (2001), vol. 41 br. 9-10, str. 1373-1378
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M 
Info PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, (2001), vol. br. , str. 243-248
Ispravka Web of Science   Citati: Web of Science   Scopus  
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Naslov Modeling of gamma-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors (Erratum - errors in Authors - vol 38, pg 4699, 1999) (Correction)
Autori Stojadinovic Ninoslav D Golubovic Snezana M Djoric-Veljkovic Snezana M Davidovic Vojkan S 
Info JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, (2001), vol. 40 br. 3A, str. 1530-1530
Ispravka Web of Science   Elečas   Rang časopisa   Citati: Web of Science  
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Naslov Radiation effects in low-temperature stressed power VDMOS transistors (Proceedings Paper)
Autori Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D 
Info 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, (2000), vol. br. , str. 337-340
Ispravka Web of Science   Citati: Web of Science   Scopus  
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