@ARTICLE{
author={Crupi Giovanni|,Latino Mariangela|,Gugliandolo Giovanni|,Marinkovic Zlatica D|0000-0002-2954-7275,Cai Jialin|,Fazio Enza|,Donato Nicola|},
year={2023},
title={GaN HEMT Modeling versus Bias Point and Gate Width},
journal={2023 58TH INTERNATIONAL SCIENTIFIC CONFERENCE ON INFORMATION, COMMUNICATION AND ENERGY SYSTEMS AND TECHNOLOGIES, ICEST},
volume={},
number={},
pages={211-214},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Crupi Giovanni|,Latino Mariangela|,Gugliandolo Giovanni|,Marinkovic Zlatica D|0000-0002-2954-7275,Cai Jialin|,Bosi Gianni|,Raffo Antonio|,Fazio Enza|,Donato Nicola|},
year={2023},
title={A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper)},
journal={ELECTRONICS},
volume={12},
number={8},
pages={-},
document_type={Article},
}