@ARTICLE{
author={Kokkoris M|,Androulakaki EG|,Czyzycki M|,Eric Marko V|,Karydas Andreas Germanos|,Leani JJ|,Mighori A|,Ntemou E|,Paneta V|,Petrovic Snjezana B|},
year={2019},
title={Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
volume={450},
number={},
pages={144-148},
document_type={Article; Proceedings Paper},
}